SSG4935P p-ch enhancement mode power mosfet -7.8 a, -30 v, r ds(on) 21 m ? elektronische bauelemente 25-aug-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature sop-8 surface mount package saves board space. ? high power and current handling capability.. ? extended v gs range ( 25) for battery pack applications. product summary product summary v ds (v) r ds (on) (m ? ? i d (a) -30 21@v gs = -10v -7.8 35@v gs = -4.5v -6.0 maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v continuous drain current a i d @ t a = 25c -7.8 a i d @ t a = 70c -6.2 a pulsed drain current b i dm 30 a continuous source current (diode conduction) a i s -1.7 a total power dissipation a p d @ t a = 25c 2.0 w p d @ t a = 70c 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient (max.) a t Q 10 sec r ja 62.5 c / w steady state 110 c / w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. sop-8 ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. a h b m d c j k f l e n g s g g s d d d d
SSG4935P p-ch enhancement mode power mosfet -7.8 a, -30 v, r ds(on) 21 m ? elektronische bauelemente 25-aug-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate threshold voltage v gs(th) -1 - -3 v v ds = v gs , i d = -250 a gate-body leakage current i gss - - 100 na v ds = 0v, v gs = 25v zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs = 0v - - -5 a v ds = -24v, v gs = 0v, t j =55c on-state drain current a i d(on) -40 - - a v ds = -5v, v gs = -10v drain-source on-resistance a r ds(on) - 19 21 m ? v gs = -10v, i d = -7.8a - 28 35 v gs = -4.5v, i d = -6.0a forward transconductance a g fs - 22 - s v ds = -10v, i d = -7.8a diode forward voltage v sd - -0.7 -1.2 v i s = -1.7a, v gs = 0v dynamic b total gate charge q g - 15 - nc i d = -7.8a v ds = -15v v gs = -5v gate-source charge q gs - 5.2 - gate-drain charge q gd - 5.8 - turn-on delay time t d(on) - 15 - ns v dd = -15v i d = -1a v gen = -10v r l = 6 ? rise time t r - 12 - turn-off delay time t d(off) - 62 - fall time t f - 46 - notes a. pulse test pw Q 300 s duty cycle Q 2%. b. guaranteed by design, not s ubject to production testing.
SSG4935P p-ch enhancement mode power mosfet -7.8 a, -30 v, r ds(on) 21 m ? elektronische bauelemente 25-aug-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSG4935P p-ch enhancement mode power mosfet -7.8 a, -30 v, r ds(on) 21 m ? elektronische bauelemente 25-aug-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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